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Infineon IRF7726TRPBF P-channel MOSFET, 7 A, 30 V HEXFET, 8-Pin SOIC

IRF7726TRPBF Infineon  P-channel MOSFET, 7 A, 30 V HEXFET, 8-Pin SOIC
IRF7726TRPBF
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
3.05 x 3.05 x 0.91mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
3.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
2204 pF @ -25 V
Length:
3.05mm
Pin Count:
8
Typical Turn-Off Delay Time:
227 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.79 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.91mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
40 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 7 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7726TRPBF. It is of power mosfet category . The given dimensions of the product include 3.05 x 3.05 x 0.91mm. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.05mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2204 pf @ -25 v . Its accurate length is 3.05mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 227 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.79 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.91mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 40 mω maximum drain source resistance.

pdf icon
IRF7726TRPBF HEXFET Power MOSFET Data Sheet(Technical Reference)

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FAQs

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You can order Infineon brand products with IRF7726TRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7726TRPBF P-channel MOSFET, 7 A, 30 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7726TRPBF P-channel MOSFET, 7 A, 30 V HEXFET, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987736 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987736.
Yes. We ship IRF7726TRPBF Internationally to many countries around the world.