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Infineon IPI45N06S4L-08 N-channel MOSFET, 45 A, 60 V OptiMOS T2, 3-Pin TO-262

IPI45N06S4L-08 Infineon  N-channel MOSFET, 45 A, 60 V OptiMOS T2, 3-Pin TO-262
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10 x 4.4 x 9.25mm
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3680 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
45 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
71 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±16 V
Height:
9.25mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
14 mΩ
Checking for live stock

This is N-channel MOSFET 45 A 60 V OptiMOS T2 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IPI45N06S4L-08. It is of power mosfet category . The given dimensions of the product include 10 x 4.4 x 9.25mm. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of to-262. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3680 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 45 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 71 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 9.25mm. In addition, it has a typical 9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 14 mω maximum drain source resistance.

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OptiMOS® -T2 Power-Transistor(Technical Reference)

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