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Infineon IPD70P04P4L-08 P-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-252

IPD70P04P4L-08 Infineon  P-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-252
IPD70P04P4L-08
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
71 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
4177 pF @ -25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
75 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±16 V
Height:
2.41mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.8 mΩ
Checking for live stock

This is P-channel MOSFET 70 A 40 V OptiMOS T2 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD70P04P4L-08. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 71 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4177 pf @ -25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 50 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 75 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 2.41mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.8 mω maximum drain source resistance.

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IPD75N04S4-06, OptiMOS® -P2 Power-Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPD70P04P4L-08 P-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD70P04P4L-08 P-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-252.
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Yes. We ship IPD70P04P4L-08 Internationally to many countries around the world.