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Infineon IPD50R280CE N-channel MOSFET, 13 A, 550 V CoolMOS CE, 3-Pin TO-252

IPD50R280CE Infineon  N-channel MOSFET, 13 A, 550 V CoolMOS CE, 3-Pin TO-252
IPD50R280CE
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
773 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
92 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
±30 V
Height:
2.41mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
660 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 13 A 550 V CoolMOS CE 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD50R280CE. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 773 pf @ 100 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 92 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.41mm. In addition, it has a typical 8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 660 mω maximum drain source resistance.

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IPD50R280CE, 500V CoolMOS CE Power Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPD50R280CE N-channel MOSFET, 13 A, 550 V CoolMOS CE, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD50R280CE N-channel MOSFET, 13 A, 550 V CoolMOS CE, 3-Pin TO-252.
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