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Infineon IPB70N04S4-06 N-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-263

IPB70N04S4-06 Infineon  N-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-263
IPB70N04S4-06
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10 x 9.25 x 4.4mm
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
24.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1960 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
58 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±20 V
Height:
4.4mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6.5 mΩ
Checking for live stock

This is N-channel MOSFET 70 A 40 V OptiMOS T2 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB70N04S4-06. It is of power mosfet category . The given dimensions of the product include 10 x 9.25 x 4.4mm. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.25mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 24.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1960 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 7 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 58 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.4mm. In addition, it has a typical 8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 6.5 mω maximum drain source resistance.

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OptiMOS® -T2 Power-Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPB70N04S4-06 N-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-263. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB70N04S4-06 N-channel MOSFET, 70 A, 40 V OptiMOS T2, 3-Pin TO-263.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987626 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987626.
Yes. We ship IPB70N04S4-06 Internationally to many countries around the world.