Infineon BCV 62A E6327 Dual PNP Transistor, 0.1 A, 30 V, 4-Pin SOT-143
Product Information
Dimensions:
2.9 x 1.3 x 1mm
Maximum Collector Emitter Saturation Voltage:
650 mV
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Current Mirror
Maximum Operating Frequency:
250 MHz
Package Type:
SOT-143
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
850 mV
Maximum Emitter Base Voltage:
6 V
Length:
2.9mm
Maximum DC Collector Current:
0.1 A
Pin Count:
4
Minimum DC Current Gain:
100
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
30 V
Height:
1mm
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This is Dual PNP Transistor 0.1 A 30 V 4-Pin SOT-143 manufactured by Infineon. The manufacturer part number is BCV 62A E6327. The given dimensions of the product include 2.9 x 1.3 x 1mm. The product has a maximum 650 mv collector emitter saturation voltage . The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers current mirror transistor configuration. It carries 250 mhz of maximum operating frequency. The package is a sort of sot-143. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 30 v maximum collector base voltage. In addition, the product has a maximum 850 mv base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 2.9mm. Moreover, it has a maximum DC collector current of 0.1 a. It contains 4 pins. It features up to 100 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Whereas features a 30 v of collector emitter voltage (max). In addition, the height is 1mm.
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