Vishay SI7222DN-T1-E3 Dual N-channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212
Product Information
Category:
Power MOSFET
Dimensions:
3.21 x 3.21 x 1.12mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
3.21mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Package Type:
PowerPAK 1212
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
700 pF @ 20 V
Length:
3.21mm
Pin Count:
8
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
17.8 W
Maximum Gate Source Voltage:
±12 V
Height:
1.12mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
470 mΩ
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Yes. We ship SI7222DN-T1-E3 Internationally to many countries around the world.
This is Dual N-channel MOSFET 6 A 40 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7222DN-T1-E3. It is of power mosfet category . The given dimensions of the product include 3.21 x 3.21 x 1.12mm. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.21mm wide. The product offers isolated transistor configuration. It has a maximum of 40 v drain source voltage. The package is a sort of powerpak 1212. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 700 pf @ 20 v . Its accurate length is 3.21mm. It contains 8 pins. The forward transconductance is 18s . Whereas, its typical turn-off delay time is about 20 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 17.8 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1.12mm. In addition, it has a typical 9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 470 mω maximum drain source resistance.
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