Vishay SI4850EY-T1-E3 N-channel MOSFET, 6 A, 60 V, 8-Pin SOIC
Product Information
Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
±20 V
Height:
1.55mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
22 mΩ
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Yes. We ship SI4850EY-T1-E3 Internationally to many countries around the world.
This is N-channel MOSFET 6 A 60 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4850EY-T1-E3. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.55mm. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 25 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.55mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 22 mω maximum drain source resistance.
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