Fairchild FCD900N60Z N-channel MOSFET, 4.5 A, 600 V SuperFET II, 3-Pin DPAK
Product Information
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
543 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
33.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 V dc, ±30 V ac
Height:
6.22mm
Typical Turn-On Delay Time:
10.9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
900 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
720 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SuperFET® II
Supplier Device Package:
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is Fairchild N-channel MOSFET 4.5 A 600 V SuperFET II 3-Pin DPAK manufactured by Fairchild Semiconductor. The manufacturer part number is FCD900N60Z. The given dimensions of the product include 6.73 x 2.39 x 6.22mm. While 4.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of dpak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 543 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 33.6 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 52 w maximum power dissipation. The product superfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v dc, ±30 v ac. In addition, the height is 6.22mm. In addition, it has a typical 10.9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 900 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 17 nc @ 10 v. It has a maximum Rds On and voltage of 900mohm @ 2.3a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 52w (tc). The product's input capacitance at maximum includes 720 pf @ 25 v. The product superfet® ii, is a highly preferred choice for users. to-252 (dpak) is the supplier device package value. The continuous current drain at 25°C is 4.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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