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Infineon IRL530NSPBF N-channel MOSFET, 17 A, 100 V HEXFET, 3-Pin D2PAK

IRL530NSPBF Infineon  N-channel MOSFET, 17 A, 100 V HEXFET, 3-Pin D2PAK
IRL530NSPBF
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
34 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
800 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
7.2 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
100 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 17 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRL530NSPBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 34 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 800 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.8 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 7.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 100 mω maximum drain source resistance.

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IRL530NSPBF Data Sheet(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRL530NSPBF N-channel MOSFET, 17 A, 100 V HEXFET, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRL530NSPBF N-channel MOSFET, 17 A, 100 V HEXFET, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13933276 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13933276.
Yes. We ship IRL530NSPBF Internationally to many countries around the world.