Category:
Power MOSFET
Maximum Continuous Drain Current:
105 A
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
12 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5320 pF @ 50 V
Pin Count:
7
Typical Turn-Off Delay Time:
37 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.55mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
This is N-channel MOSFET Transistor 105 A 150 V HEXFET 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS4115-7PPBF. It is of power mosfet category . While 105 a of maximum continuous drain current. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 12 mω maximum drain source resistance. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 73 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5320 pf @ 50 v . It contains 7 pins. Whereas, its typical turn-off delay time is about 37 ns . The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 380 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.55mm. In addition, it has a typical 18 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
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