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Infineon IRFR8314TRPBF N-channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK

IRFR8314TRPBF Infineon  N-channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK
Infineon

Product Information

Maximum Continuous Drain Current:
179 A
Transistor Material:
Si
Width:
7.49mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
36 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
3.1 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 179 A 30 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR8314TRPBF. While 179 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 7.49mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 36 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 125 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 3.1 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
pdf icon
IRFR8314PbF N-channel HEXFET Power MOSFET(Technical Reference)

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FAQs

Yes. You can also search IRFR8314TRPBF on website for other similar products.
We accept all major payment methods for all products including ET13933242. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRFR8314TRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFR8314TRPBF N-channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFR8314TRPBF N-channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13933242 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13933242.
Yes. We ship IRFR8314TRPBF Internationally to many countries around the world.