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Infineon IPD053N08N3G N-channel MOSFET, 90 A, 80 V OptiMOS 3, 3-Pin TO-252

IPD053N08N3G Infineon  N-channel MOSFET, 90 A, 80 V OptiMOS 3, 3-Pin TO-252
IPD053N08N3G
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.413mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
52 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3570 pF @ 40 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
2.413mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.5 mΩ
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This is N-channel MOSFET 90 A 80 V OptiMOS 3 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD053N08N3G. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.413mm. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 52 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3570 pf @ 40 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 38 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.413mm. In addition, it has a typical 18 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 9.5 mω maximum drain source resistance.

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IPD053N08N3 G, OptiMOS3 Power-Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPD053N08N3G N-channel MOSFET, 90 A, 80 V OptiMOS 3, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD053N08N3G N-channel MOSFET, 90 A, 80 V OptiMOS 3, 3-Pin TO-252.
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