Vishay SI2306BDS-T1-E3 N-channel MOSFET Transistor, 3.1 A, 30 V, 3-Pin TO-236
Product Information
Category:
Power MOSFET
Dimensions:
3.04 x 1.4 x 1.02mm
Maximum Continuous Drain Current:
3.1 A
Width:
1.4mm
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
47 mΩ
Package Type:
TO-236
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
305 pF @ 15 V
Length:
3.04mm
Pin Count:
3
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.75 W
Maximum Gate Source Voltage:
±20 V
Height:
1.02mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
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This is N-channel MOSFET Transistor 3.1 A 30 V 3-Pin TO-236 manufactured by Vishay. The manufacturer part number is SI2306BDS-T1-E3. It is of power mosfet category . The given dimensions of the product include 3.04 x 1.4 x 1.02mm. While 3.1 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. It has a maximum of 30 v drain source voltage. It provides up to 47 mω maximum drain source resistance. The package is a sort of to-236. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 305 pf @ 15 v . Its accurate length is 3.04mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 14 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.75 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.02mm. In addition, it has a typical 7 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
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