Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
870 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
±10 V
Height:
6.22mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
100 mΩ
This is N-channel MOSFET 14 A 60 V 3-Pin IPAK manufactured by Vishay. The manufacturer part number is IRLU024PBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 2.39 x 6.22mm. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 870 pf@ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 23 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of ±10 v. In addition, the height is 6.22mm. In addition, it has a typical 11 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 100 mω maximum drain source resistance.
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