Infineon IRF8252PBF N-channel MOSFET, 25 A, 25 V HEXFET, 8-Pin SOIC
Product Information
Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
2.35V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5305 pF@ 13 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
23 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRF8252PBF Internationally to many countries around the world.
This is N-channel MOSFET 25 A 25 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF8252PBF. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 35 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5305 pf@ 13 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 19 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. In addition, it has a typical 23 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3 mω maximum drain source resistance.
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