Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2311 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
11.5S
Typical Turn-Off Delay Time:
137 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
231.4 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.51mm
Typical Turn-On Delay Time:
57 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
400 mΩ
This is N-channel MOSFET 15 A 600 V 3-Pin TO-220 manufactured by MagnaChip. The manufacturer part number is MDP15N60GTH. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. While 15 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2311 pf @ 25 v . Its accurate length is 10.67mm. It contains 3 pins. The forward transconductance is 11.5s . Whereas, its typical turn-off delay time is about 137 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 231.4 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.51mm. In addition, it has a typical 57 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 400 mω maximum drain source resistance.
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