Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V, 35 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
19.7 mΩ
This is IRF9328PBF P-channel MOSFET 12 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF9328TRPBF. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 4.5 v, 35 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 19.7 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.