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Infineon IPB80N03S4L-03 N-channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin TO-263

IPB80N03S4L-03 Infineon  N-channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin TO-263
IPB80N03S4L-03
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10.312 x 9.45 x 4.572mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4000 pF @ 25 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
37 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
94 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±16 V
Height:
4.572mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
5 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 80 A 30 V OptiMOS T2 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB80N03S4L-03. It is of power mosfet category . The given dimensions of the product include 10.312 x 9.45 x 4.572mm. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4000 pf @ 25 v . Its accurate length is 10.31mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 37 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 94 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 4.572mm. In addition, it has a typical 9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 5 mω maximum drain source resistance.

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IPB80N03S4L-03, IPI80N03S4L-04, IPP80N03S4L-04, OptiMOS-T2 Power-Transistor(Technical Reference)

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You can order Infineon brand products with IPB80N03S4L-03 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of Infineon IPB80N03S4L-03 N-channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin TO-263. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB80N03S4L-03 N-channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin TO-263.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13874500 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13874500.
Yes. We ship IPB80N03S4L-03 Internationally to many countries around the world.