Category:
Power MOSFET
Dimensions:
10.312 x 9.45 x 4.572mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4000 pF @ 25 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
37 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
94 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±16 V
Height:
4.572mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
5 mΩ
This is N-channel MOSFET 80 A 30 V OptiMOS T2 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB80N03S4L-03. It is of power mosfet category . The given dimensions of the product include 10.312 x 9.45 x 4.572mm. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4000 pf @ 25 v . Its accurate length is 10.31mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 37 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 94 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 4.572mm. In addition, it has a typical 9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 5 mω maximum drain source resistance.
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