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Infineon IPG20N04S4L-08 Dual N-channel MOSFET, 20 A, 40 V OptiMOS T2, 8-Pin TDSON

IPG20N04S4L-08 Infineon  Dual N-channel MOSFET, 20 A, 40 V OptiMOS T2, 8-Pin TDSON
IPG20N04S4L-08
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
5.15 x 6.15 x 1mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
6.15mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TDSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2350 pF @ 25 V
Length:
5.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
54 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±16 V
Height:
1mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10.9 mΩ
Checking for live stock

This is Dual N-channel MOSFET 20 A 40 V OptiMOS T2 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N04S4L-08. It is of power mosfet category . The given dimensions of the product include 5.15 x 6.15 x 1mm. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.15mm wide. The product offers isolated transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2350 pf @ 25 v . Its accurate length is 5.15mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 54 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 1mm. In addition, it has a typical 7 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10.9 mω maximum drain source resistance.

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IPG20N04S4L-08, OptiMOS-T2 Power-Transistor(Technical Reference)

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You can order Infineon brand products with IPG20N04S4L-08 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of Infineon IPG20N04S4L-08 Dual N-channel MOSFET, 20 A, 40 V OptiMOS T2, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon IPG20N04S4L-08 Dual N-channel MOSFET, 20 A, 40 V OptiMOS T2, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13874481 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13874481.
Yes. We ship IPG20N04S4L-08 Internationally to many countries around the world.