Toshiba TK22A10N1,S4X(S N-channel MOSFET, 22 A, 100 V TK, 3-Pin TO-220SIS
Product Information
Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Series:
TK
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
13.8 mΩ
Checking for live stock
FAQs
Yes. You can also search TK22A10N1,S4X(S on website for other similar products.
We accept all major payment methods for all products including ET13865014. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TK22A10N1,S4X(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK22A10N1,S4X(S N-channel MOSFET, 22 A, 100 V TK, 3-Pin TO-220SIS. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK22A10N1,S4X(S N-channel MOSFET, 22 A, 100 V TK, 3-Pin TO-220SIS.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13865014 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13865014.
Yes. We ship TK22A10N1,S4X(S Internationally to many countries around the world.
This is N-channel MOSFET 22 A 100 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK22A10N1,S4X(S. While 52 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15mm. Its forward diode voltage is 1.2v . It provides up to 13.8 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.