Fairchild 2N7002DW Dual N-channel MOSFET, 115 mA, 60 V, 6-Pin SC-70
Product Information
Category:
Power MOSFET
Dimensions:
2 x 1.25 x 1mm
Maximum Continuous Drain Current:
115 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SC-70
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
37.8 pF@ 25 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
12.5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.2 W
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
5.85 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.5 Ω
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This is Fairchild Dual N-channel MOSFET 115 mA 60 V 6-Pin SC-70 manufactured by Fairchild Semiconductor. The manufacturer part number is 2N7002DW. It is of power mosfet category . The given dimensions of the product include 2 x 1.25 x 1mm. While 115 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of sc-70. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of 150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 37.8 pf@ 25 v . Its accurate length is 2mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 12.5 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.2 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1mm. In addition, it has a typical 5.85 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 13.5 ω maximum drain source resistance.
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