Infineon IRL2910SPBF N-channel MOSFET, 55 A, 100 V HEXFET, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
55 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
140 nC @ 5 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
26 mΩ
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Yes. We ship IRL2910SPBF Internationally to many countries around the world.
This is N-channel MOSFET 55 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRL2910SPBF. While 55 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 140 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.8 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 26 mω maximum drain source resistance.
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