Infineon IRF9310PBF P-channel MOSFET, 20 A, 30 V HEXFET, 8-Pin SOIC
Product Information
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
3.99mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
58 nC @ 4.5 V, 110 nC @ 10 V
Channel Type:
P
Length:
4.98mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRF9310PBF Internationally to many countries around the world.
This is P-channel MOSFET 20 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF9310PBF. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.99mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 58 nc @ 4.5 v, 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.98mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.
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