Renesas 2SJ553STR-E P-channel MOSFET, 30 A, 60 V, 2+Tab-Pin LDPAK-S
Product Information
Category:
Power MOSFET
Dimensions:
10.2 x 8.6 x 4.44mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
8.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
LDPAK-S
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
P
Typical Input Capacitance @ Vds:
2500 pF @ -10 V
Length:
10.2mm
Pin Count:
3
Typical Turn-Off Delay Time:
350 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.44mm
Typical Turn-On Delay Time:
25 ns
Forward Diode Voltage:
0.95V
Maximum Drain Source Resistance:
50 mΩ
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This is Renesas P-channel MOSFET 30 A 60 V 2+Tab-Pin LDPAK-S manufactured by Renesas Electronics. The manufacturer part number is 2SJ553STR-E. It is of power mosfet category . The given dimensions of the product include 10.2 x 8.6 x 4.44mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 8.6mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of ldpak-s. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2500 pf @ -10 v . Its accurate length is 10.2mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 350 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 75 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.44mm. In addition, it has a typical 25 ns turn-on delay time . Its forward diode voltage is 0.95v . It provides up to 50 mω maximum drain source resistance.
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