Infineon IRF9910PBF Dual N-channel MOSFET, 10 A, 12 A, 20 V HEXFET, 8-Pin SOIC
Product Information
Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
10 A, 12 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.55V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.4 nC @ 4.5 V, 15 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
900 pF@ 10 V, 1860 pF@ 10 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
9.2 ns, 15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
6.3 (Q1) ns, 8.3 (Q2) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9 mΩ, 13 mΩ
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This is Dual N-channel MOSFET 10 A 12 A 20 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF9910PBF. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 10 a, 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 2.55v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.4 nc @ 4.5 v, 15 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 900 pf@ 10 v, 1860 pf@ 10 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 9.2 ns, 15 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.5mm. In addition, it has a typical 6.3 (q1) ns, 8.3 (q2) ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 9 mω, 13 mω maximum drain source resistance.
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