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Infineon IPW90R1K0C3 N-channel MOSFET, 5.7 A, 900 V CoolMOS C3, 3-Pin TO-247

IPW90R1K0C3 Infineon  N-channel MOSFET, 5.7 A, 900 V CoolMOS C3, 3-Pin TO-247
IPW90R1K0C3
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
16.13 x 21.1 x 5.21mm
Maximum Continuous Drain Current:
5.7 A
Transistor Material:
Si
Width:
21.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
850 pF @ 100 V
Length:
16.13mm
Pin Count:
3
Typical Turn-Off Delay Time:
400 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
89 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±30 V
Height:
5.21mm
Typical Turn-On Delay Time:
70 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 5.7 A 900 V CoolMOS C3 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW90R1K0C3. It is of power mosfet category . The given dimensions of the product include 16.13 x 21.1 x 5.21mm. While 5.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 21.1mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 850 pf @ 100 v . Its accurate length is 16.13mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 400 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 89 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 5.21mm. In addition, it has a typical 70 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1 ω maximum drain source resistance.

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IPW90R1K0C3 CoolMOS Power Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPW90R1K0C3 N-channel MOSFET, 5.7 A, 900 V CoolMOS C3, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Infineon IPW90R1K0C3 N-channel MOSFET, 5.7 A, 900 V CoolMOS C3, 3-Pin TO-247.
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