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Infineon IRLR2705PBF N-channel MOSFET, 28 A, 55 V HEXFET, 3-Pin DPAK

IRLR2705PBF Infineon  N-channel MOSFET, 28 A, 55 V HEXFET, 3-Pin DPAK
IRLR2705PBF
IRLR2705PBF
ET13824456
ET13824456
Unclassified
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
40 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
880 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
68 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.39mm
Typical Turn-On Delay Time:
8.9 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 28 A 55 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRLR2705PBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.39mm. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 2v of maximum gate threshold voltage. It provides up to 40 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 25 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 880 pf@ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 21 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 68 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 2.39mm. In addition, it has a typical 8.9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

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IRLR2705PBF Data Sheet(Technical Reference)

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FAQs

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You can order Infineon brand products with IRLR2705PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRLR2705PBF N-channel MOSFET, 28 A, 55 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLR2705PBF N-channel MOSFET, 28 A, 55 V HEXFET, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13824456 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13824456.
Yes. We ship IRLR2705PBF Internationally to many countries around the world.