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Fairchild FDB8880 N-channel MOSFET, 54 A, 30 V PowerTrench, 3-Pin TO-263AB

FDB8880 Fairchild  N-channel MOSFET, 54 A, 30 V PowerTrench, 3-Pin TO-263AB
FDB8880
FDB8880
Fairchild Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
54 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1240 pF@ 15 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
47 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
19 mΩ
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
11.6mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1240 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 54A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB888
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Fairchild N-channel MOSFET 54 A 30 V PowerTrench 3-Pin TO-263AB manufactured by Fairchild Semiconductor. The manufacturer part number is FDB8880. It is of power mosfet category . The given dimensions of the product include 10.67 x 11.33 x 4.83mm. While 54 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1240 pf@ 15 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 47 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 55 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 19 mω maximum drain source resistance. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 11.6mohm @ 40a, 10v. The maximum gate charge and given voltages include 29 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 55w (tc). The product's input capacitance at maximum includes 1240 pf @ 15 v. The product powertrench®, is a highly preferred choice for users. to-263ab is the supplier device package value. The continuous current drain at 25°C is 11a (ta), 54a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdb888, a base product number of the product. The product is designated with the ear99 code number.

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FDP8880/FDB8880, PowerTrench 30V N-Channel MOSFET(Technical Reference)

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You can order Fairchild Semiconductor brand products with FDB8880 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Fairchild FDB8880 N-channel MOSFET, 54 A, 30 V PowerTrench, 3-Pin TO-263AB. You can also check on our website or by contacting our customer support team for further order details on Fairchild FDB8880 N-channel MOSFET, 54 A, 30 V PowerTrench, 3-Pin TO-263AB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13817091 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Fairchild Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13817091.
Yes. We ship FDB8880 Internationally to many countries around the world.