Infineon IRFR3708PBF N-channel MOSFET, 61 A, 30 V HEXFET, 3-Pin DPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
61 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
DPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
24 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2417 pF @ 15 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
49S
Typical Turn-Off Delay Time:
17.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
87 W
Series:
HEXFET
Maximum Gate Source Voltage:
±12 V
Height:
6.22mm
Typical Turn-On Delay Time:
7.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
30 mΩ
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Yes. We ship IRFR3708PBF Internationally to many countries around the world.
This is N-channel MOSFET 61 A 30 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR3708PBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 2.39 x 6.22mm. While 61 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of dpak. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 24 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2417 pf @ 15 v . Its accurate length is 6.73mm. It contains 3 pins. The forward transconductance is 49s . Whereas, its typical turn-off delay time is about 17.6 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 87 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±12 v. In addition, the height is 6.22mm. In addition, it has a typical 7.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 30 mω maximum drain source resistance.
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