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Infineon IRGS15B60KPBF IGBT, 31 A 600 V, 3-Pin D2PAK (TO-263)

IRGS15B60KPBF Infineon  IGBT, 31 A 600 V, 3-Pin D2PAK (TO-263)
Infineon

Product Information

Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
208 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
31 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Gate Capacitance:
850pF
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Energy Rating:
1070mJ
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 31 A 600 V 3-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IRGS15B60KPBF. The given dimensions of the product include 10.67 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 208 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 31 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has approximately 850pf gate capacitance . It has a maximum operating temperature of +150 °c. It contains 3 pins. It has approximately 1070mj energy rating . The product offers single transistor configuration.

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IRGS15B60KPbF, Insulated Gate Bipolar Transistor (IGBT)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRGS15B60KPBF IGBT, 31 A 600 V, 3-Pin D2PAK (TO-263). You can also check on our website or by contacting our customer support team for further order details on Infineon IRGS15B60KPBF IGBT, 31 A 600 V, 3-Pin D2PAK (TO-263).
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