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Infineon IPB45N04S4L-08 N-channel MOSFET, 45 A, 40 V OptiMOS T2, 3-Pin TO-263

IPB45N04S4L-08 Infineon  N-channel MOSFET, 45 A, 40 V OptiMOS T2, 3-Pin TO-263
IPB45N04S4L-08
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10 x 9.25 x 4.4mm
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1800 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
-16 V, 20 V
Height:
4.4mm
Typical Turn-On Delay Time:
4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10.9 mΩ
Checking for live stock

This is N-channel MOSFET 45 A 40 V OptiMOS T2 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB45N04S4L-08. It is of power mosfet category . The given dimensions of the product include 10 x 9.25 x 4.4mm. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.25mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1800 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 11 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 45 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, 20 v. In addition, the height is 4.4mm. In addition, it has a typical 4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10.9 mω maximum drain source resistance.

pdf icon
IPB45N04S4L08, IPI45N04S4L08, IPP45N04S4L08 OptiMOS T2 Power Transistor Datasheet(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPB45N04S4L-08 N-channel MOSFET, 45 A, 40 V OptiMOS T2, 3-Pin TO-263. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB45N04S4L-08 N-channel MOSFET, 45 A, 40 V OptiMOS T2, 3-Pin TO-263.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13795140 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13795140.
Yes. We ship IPB45N04S4L-08 Internationally to many countries around the world.