Toshiba Semiconductor and Storage TK2A65D(STA4,Q,M)
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
3.26Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
380 pF @ 25 V
standardLeadTime:
32 Weeks
Mounting Type:
Through Hole
Series:
π-MOSVII
Supplier Device Package:
TO-220SIS
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK2A65
ECCN:
EAR99
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TK2A65D(STA4,Q,M) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK2A65D(STA4,Q,M). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK2A65D(STA4,Q,M).
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13074729 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13074729.
Yes. We ship TK2A65D(STA4,Q,M) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK2A65D(STA4,Q,M). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 3.26ohm @ 1a, 10v. The maximum gate charge and given voltages include 9 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). The product's input capacitance at maximum includes 380 pf @ 25 v. It has a long 32 weeks standard lead time. The product is available in through hole configuration. The product π-mosvii, is a highly preferred choice for users. to-220sis is the supplier device package value. The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk2a65, a base product number of the product. The product is designated with the ear99 code number.
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