Microsemi Corporation APT24M120B2
Product Information
Rds On (Max) @ Id, Vgs:
630mOhm @ 12A, 10V
Detailed Description:
N-Channel 1200V 24A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
Input Capacitance (Ciss) (Max) @ Vds:
8370pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Series:
POWER MOS 8™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
260nC @ 10V
Supplier Device Package:
T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-247-3 Variant
Power Dissipation (Max):
1040W (Tc)
Drain to Source Voltage (Vdss):
1200V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT24M120B2. It has a maximum Rds On and voltage of 630mohm @ 12a, 10v. It features n-channel 1200v 24a (tc) 1040w (tc) through hole t-max™ [b2]. The product's input capacitance at maximum includes 8370pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product power mos 8™, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 260nc @ 10v. t-max™ [b2] is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3 variant. The product carries maximum power dissipation 1040w (tc). The product has a 1200v drain to source voltage. The continuous current drain at 25°C is 24a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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