STMicroelectronics STF26NM60ND
Product Information
Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 16.4mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
54.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1817 pF @ 100 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
69 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Series:
FDmesh
Maximum Gate Source Voltage:
±25 V
Height:
16.4mm
Typical Turn-On Delay Time:
22 ns
Maximum Drain Source Resistance:
175 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
175mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
54.6 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1817 pF @ 100 V
Mounting Type:
Through Hole
Series:
FDmesh™ II
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF26
ECCN:
EAR99
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This is manufactured by STMicroelectronics. The manufacturer part number is STF26NM60ND. It is of power mosfet category . The given dimensions of the product include 10.4 x 4.6 x 16.4mm. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 54.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1817 pf @ 100 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 69 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of ±25 v. In addition, the height is 16.4mm. In addition, it has a typical 22 ns turn-on delay time . It provides up to 175 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 175mohm @ 10.5a, 10v. The maximum gate charge and given voltages include 54.6 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 35w (tc). The product's input capacitance at maximum includes 1817 pf @ 100 v. The product fdmesh™ ii, is a highly preferred choice for users. to-220fp is the supplier device package value. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf26, a base product number of the product. The product is designated with the ear99 code number.
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