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IXYS IXFX64N60Q3

IXFX64N60Q3 IXYS
IXFX64N60Q3
IXFX64N60Q3
ET12183521
ET12183521
Single FETs, MOSFETs
Single FETs, MOSFETs
IXYS

Product Information

Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Continuous Drain Current:
64 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
PLUS247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
190 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9930 pF @ 25 V
Length:
16.13mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 kW
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.34mm
Typical Turn-On Delay Time:
45 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
95 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Rds On (Max) @ Id, Vgs:
95mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs:
190 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9930 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
PLUS247™-3
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX64
ECCN:
EAR99
RoHs Compliant
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This is manufactured by IXYS. The manufacturer part number is IXFX64N60Q3. It is of power mosfet category . The given dimensions of the product include 16.13 x 5.21 x 21.34mm. While 64 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. The package is a sort of plus247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 190 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 9930 pf @ 25 v . Its accurate length is 16.13mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 50 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1.25 kw maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.34mm. In addition, it has a typical 45 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 95 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 6.5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3 variant. It has a maximum Rds On and voltage of 95mohm @ 32a, 10v. The maximum gate charge and given voltages include 190 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1250w (tc). The product's input capacitance at maximum includes 9930 pf @ 25 v. The product hiperfet™, is a highly preferred choice for users. plus247™-3 is the supplier device package value. The continuous current drain at 25°C is 64a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfx64, a base product number of the product. The product is designated with the ear99 code number.

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IXFK64N60Q3, IXFX64N60Q3, HiperFET, Power MOSFET, Q3-Class, N-Channel Enhancement Mode, Fast Intrinsic Rectifier(Technical Reference)
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IXFx64N60Q3(Datasheets)

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FAQs

Yes. You can also search IXFX64N60Q3 on website for other similar products.
We accept all major payment methods for all products including ET12183521. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFX64N60Q3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFX64N60Q3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFX64N60Q3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12183521 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12183521.
Yes. We ship IXFX64N60Q3 Internationally to many countries around the world.