Toshiba Semiconductor and Storage SSM6N15FE(TE85L,F)
Product Information
FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
4 Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds:
7.8pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Standard Package:
1
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
150mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
100mA
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. We ship SSM6N15FE(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N15FE(TE85L,F). The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 4 ohm @ 10ma, 4v. The product's input capacitance at maximum includes 7.8pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. It is available in the standard package of 1. Moreover, the product comes in sot-563, sot-666. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 100ma. The toshiba semiconductor and storage's product offers user-desired applications.
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