Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
710 V
Maximum Gate Threshold Voltage:
5V
Package Type:
PowerFLAT HV
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
82 nC @ 10 V
Channel Type:
N
Length:
8mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.8 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
0.95mm
Maximum Drain Source Resistance:
86 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
86mOhm @ 14.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
82 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STL45N65M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4156654
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
2.8W (Ta), 160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3470 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
PowerFLAT™ (8x8)
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta), 22.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL45
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is STL45N65M5. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 8mm wide. The product offers single transistor configuration. It has a maximum of 710 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of powerflat hv. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 82 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 8mm. It contains 5 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.8 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 0.95mm. It provides up to 86 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 86mohm @ 14.5a, 10v. The maximum gate charge and given voltages include 82 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 2.8w (ta), 160w (tc). The product's input capacitance at maximum includes 3470 pf @ 100 v. It has a long 16 weeks standard lead time. The product mdmesh™ v, is a highly preferred choice for users. powerflat™ (8x8) is the supplier device package value. The continuous current drain at 25°C is 3.8a (ta), 22.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stl45, a base product number of the product. The product is designated with the ear99 code number.
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