This is manufactured by Renesas Electronics America. The manufacturer part number is RJH60F7ADPK-00#T0. Base Part Number: rjh60f. It features igbt trench 600v 90a 328.9w through hole to-3p. It has a trr (reverse recovery time) of 140ns. The product is available in through hole configuration. The maximum collector current includes 90a. Features 1.75v @ 15v, 50a. The product has 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 63ns/142ns. The maximum power of the product is 328.9w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT trench type. Test condition included 400v, 30a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
Power Transistors Relocation 12/Nov/2013(PCN Assembly/Origin)
RJH60F7ADPK(Datasheets)
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH60F7ADPK-00#T0. Base Part Number: rjh60f. It features igbt trench 600v 90a 328.9w through hole to-3p. It has a trr (reverse recovery time) of 140ns. The product is available in through hole configuration. The maximum collector current includes 90a. Features 1.75v @ 15v, 50a. The product has 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 63ns/142ns. The maximum power of the product is 328.9w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT trench type. Test condition included 400v, 30a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.