Transistor Type:
PNP
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Saturation Voltage:
4 V dc
Maximum Collector Base Voltage:
400 V dc
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
16 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Base Part Number:
MJW21193
Detailed Description:
Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 8A, 5V
Transistor Type:
PNP
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJW21193G. The transistor is a pnp type. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product has a maximum 4 v dc collector emitter saturation voltage . Additionally, it has 400 v dc maximum collector base voltage. Whereas features a 250 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-247. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 16 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 21 weeks of manufacturer standard lead time. Base Part Number: mjw21193. It features bipolar (bjt) transistor pnp 250v 16a 4mhz 200w through hole to-247. Furthermore, 20 @ 8a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 4v @ 3.2a, 16a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-247-3. The maximum collector current includes 16a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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