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Manufacturer : STMicroelectronics
Manufacturer Part No : STFW1N105K3
Enrgtech Part No : ET11493173
Product Range : PolySwitch RXEF Series

STMicroelectronics STFW1N105K3

MOSFET N-CH 1050V 1.4A TO3PF

Product Information

Manufacturer Standard Lead Time : 22 Weeks
Rds On (Max) @ Id, Vgs : 11 Ohm @ 600mA, 10V
Detailed Description : N-Channel 1050V 1.4A (Tc) 20W (Tc) Through Hole ISOWATT-218FX
Input Capacitance (Ciss) (Max) @ Vds : 180pF @ 100V
Mounting Type : Through Hole
Vgs(th) (Max) @ Id : 4.5V @ 50µA
Part Status : Active
Series : SuperMESH3™
Vgs (Max) : ±30V
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V
Supplier Device Package : ISOWATT-218FX
Drive Voltage (Max Rds On, Min Rds On) : 10V
Packaging : Tube
Operating Temperature : -55°C ~ 150°C (TJ)
FET Type : N-Channel
Package / Case : ISOWATT218FX
Power Dissipation (Max) : 20W (Tc)
Drain to Source Voltage (Vdss) : 1050V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Tc)
Technology : MOSFET (Metal Oxide)
Manufacturer : STMicroelectronics
Category : Power MOSFET
Dimensions : 15.7 x 5.7 x 26.7mm
Maximum Continuous Drain Current : 1.4 A
Transistor Material : Si
Width : 5.7mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 1050 V
Maximum Gate Threshold Voltage : 4.5V
Package Type : TO-3PF
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 2V
Maximum Operating Temperature : +150 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 13 nC @ 10 V
Channel Type : N
Typical Input Capacitance @ Vds : 180 pF @ 100 V
Length : 15.7mm
Pin Count : 3
Typical Turn-Off Delay Time : 27 ns
Mounting Type : Through Hole
Channel Mode : Enhancement
Maximum Power Dissipation : 20 W
Series : MDmesh K3, SuperMESH3
Maximum Gate Source Voltage : -30 V, +30 V
Height : 26.7mm
Typical Turn-On Delay Time : 6 ns
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 11 Ω

Technical Documents


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