Toshiba Semiconductor and Storage RN1408,LF(B
Product Information
Resistor - Base (R1):
22 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Other Names:
RN1408(TE85LF)CT
RN1408(TE85LF)CT-ND
RN1408LF(BCT
RN1408LFCT
RN1408LFCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship RN1408,LF(B Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1408,LF(B. Resistor - Base - 22 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 250mhz 200mw surface mount s-mini. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn1408(te85lf)ct rn1408(te85lf)ct-nd rn1408lf(bct rn1408lfct rn1408lfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
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