Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1) (Ohms):
1k
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2) (Ohms):
10k
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Toshiba Semiconductor and Storage
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1414,LF(B. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. Features 1k base resistor. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. While the emitter base resistor (R2) is 10k. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-236-3, sc-59, sot-23-3. In addition, 500na is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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