Toshiba Semiconductor and Storage RN2110,LF(CB
Product Information
Resistor - Base (R1):
4.7 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
SSM
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SC-75, SOT-416
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
RN2110(T5LFT)CT
RN2110(T5LFT)CT-ND
RN2110,LF(CBCT
RN2110LF(CBCT
RN2110LF(CTCT
RN2110LF(CTCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship RN2110,LF(CB Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2110,LF(CB. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mhz 100mw surface mount ssm. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. ssm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in sc-75, sot-416. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn2110(t5lft)ct rn2110(t5lft)ct-nd rn2110,lf(cbct rn2110lf(cbct rn2110lf(ctct rn2110lf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
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