Toshiba Semiconductor and Storage RN2112,LF(CB
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Resistor - Base (R1) (Ohms):
22k
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
SSM
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SC-75, SOT-416
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
RN2112(T5LFT)CT
RN2112(T5LFT)CT-ND
RN2112LF(CBCT
RN2112LF(CTCT
RN2112LF(CTCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
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We accept all major payment methods for all products including ET10935680. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with RN2112,LF(CB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN2112,LF(CB. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN2112,LF(CB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10935680 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10935680.
Yes. We ship RN2112,LF(CB Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2112,LF(CB. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. Features 22k base resistor. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. ssm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in sc-75, sot-416. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn2112(t5lft)ct rn2112(t5lft)ct-nd rn2112lf(cbct rn2112lf(ctct rn2112lf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
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