Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
5V
Height:
0.95mm
Width:
8mm
Length:
8mm
Minimum Gate Threshold Voltage:
3V
Package Type:
PowerFLAT HV
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Maximum Drain Source Resistance:
374 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
5
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
374mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds:
816 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
PowerFlat™ (8x8) HV
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta), 10A (Tc)
Power Dissipation (Max):
2.8W (Ta), 70W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL17
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is STL17N65M5. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 8mm wide. Its accurate length is 8mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of powerflat hv. It consists of 1 elements per chip. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 374 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 5 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 374mohm @ 5.5a, 10v. The maximum gate charge and given voltages include 22 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 816 pf @ 100 v. The product mdmesh™ v, is a highly preferred choice for users. powerflat™ (8x8) hv is the supplier device package value. The continuous current drain at 25°C is 1.8a (ta), 10a (tc). The product carries maximum power dissipation 2.8w (ta), 70w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stl17, a base product number of the product. The product is designated with the ear99 code number.
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