Microsemi Corporation APT6013JLL
Product Information
Rds On (Max) @ Id, Vgs:
130mOhm @ 19.5A, 10V
Detailed Description:
N-Channel 600V 39A (Tc) 460W (Tc) Chassis Mount ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds:
5630pF @ 25V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Series:
POWER MOS 7®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 10V
Supplier Device Package:
ISOTOP®
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-227-4, miniBLOC
Power Dissipation (Max):
460W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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Yes. We ship APT6013JLL Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT6013JLL. It has a maximum Rds On and voltage of 130mohm @ 19.5a, 10v. It features n-channel 600v 39a (tc) 460w (tc) chassis mount isotop®. The product's input capacitance at maximum includes 5630pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product power mos 7®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 130nc @ 10v. isotop® is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product carries maximum power dissipation 460w (tc). The product has a 600v drain to source voltage. The continuous current drain at 25°C is 39a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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