Microsemi Corporation JANTX2N3810L
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
50mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
250mV @ 100µA, 1mA
Series:
Military, MIL-PRF-19500/336
Package / Case:
TO-78-6 Metal Can
Supplier Device Package:
TO-78-6
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
350mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with JANTX2N3810L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JANTX2N3810L. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JANTX2N3810L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10294314 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10294314.
Yes. We ship JANTX2N3810L Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N3810L. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 50ma. It features bipolar (bjt) transistor array 2 pnp (dual) 60v 50ma 350mw through hole to-78-6. Furthermore, 150 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The product is available in through hole configuration. The 250mv @ 100µa, 1ma is the maximum Vce saturation. The product military, mil-prf-19500/336, is a highly preferred choice for users. Moreover, the product comes in to-78-6 metal can. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 350mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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