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Manufacturer : Infineon
Manufacturer Part No : IRFR1018EPBF
Enrgtech Part No : ET10002025
Product Range : PolySwitch RXEF Series

Infineon IRFR1018EPBF N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin DPAK

N-Channel Power MOSFET 60V to 80V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Product Information

Maximum Continuous Drain Current : 79 A
Transistor Material : Si
Width : 6.22mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 60 V
Maximum Gate Threshold Voltage : 4V
Package Type : DPAK (TO-252)
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 2V
Maximum Operating Temperature : +175 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 46 nC @ 10 V
Channel Type : N
Length : 6.73mm
Pin Count : 3
Channel Mode : Enhancement
Mounting Type : Surface Mount
Maximum Power Dissipation : 110 W
Series : HEXFET
Maximum Gate Source Voltage : -20 V, +20 V
Height : 2.39mm
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 8 mΩ

Technical Documents

  • MOSFET N-ch HEXFET 60V 79A DPAK (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

Availability:
80
in stock
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