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Manufacturer : Infineon
Manufacturer Part No : IRFR3411TRPBF
Enrgtech Part No : ET10001596
Product Range : PolySwitch RXEF Series

Infineon IRFR3411TRPBF N-channel MOSFET, 32 A, 100 V HEXFET, 3-Pin DPAK

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Product Information

Maximum Continuous Drain Current : 32 A
Transistor Material : Si
Width : 7.49mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 100 V
Maximum Gate Threshold Voltage : 4V
Package Type : DPAK (TO-252)
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 2V
Maximum Operating Temperature : +175 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 48 nC @ 10 V
Channel Type : N
Length : 6.73mm
Pin Count : 3
Channel Mode : Enhancement
Mounting Type : Surface Mount
Maximum Power Dissipation : 130 W
Series : HEXFET
Maximum Gate Source Voltage : -20 V, +20 V
Height : 2.39mm
Minimum Operating Temperature : -55 °C
Forward Diode Voltage : 1.2V
Maximum Drain Source Resistance : 44 mΩ

Technical Documents

  • IRFR3411PbF N-channel HEXFET Power MOSFET (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

Availability:
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